Many industries will benefit a great deal from the Finwave platform in the coming years".— Arunas Chesonis, Managing Partner, Safar Partners With a product roadmap designed to harness the full potential of GaN, Finwave is committed to delivering cost-effective RF devices, delivering enhanced performance, and enabling more efficient RF systems. Finwave’s unique and highly differentiated GaN-on-Si RF chips are targeted to a wide-array of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, customer premise equipment, fixed wireless access), Wi-Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment.
Investor Confidence Key to Company’s Next Phase: Productizing Disruptive GaN-on-Si Technology to Address Increasing Performance and Efficiency DemandsWALTHAM, Mass., May 14, 2025 (GLOBE NEWSWIRE) -- Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc.today announced a new $8.2M bridge investment round, led by Fine Structure Ventures, Engine Ventures, and Safar Partners – with strategic participation from technology partner GlobalFoundries.
More than just funding, this is a clear endorsement of our direction – and a strong signal that the industry believes in the path we’re on.” Finwave will use this investment to accelerate revenue generation, expand its product portfolio and continue developing innovative GaN-on-Si technology for the following targeted market segments: High-Power RF Switches, Power Amplifiers for communications infrastructure, and Power Amplifiers for mobile devices.
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